Part Number Hot Search : 
00LVEL LHR64 NE24200 SMB39 MV704X 04500 E3506S HTL294MI
Product Description
Full Text Search
 

To Download TEA1066T Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 INTEGRATED CIRCUITS
DATA SHEET
TEA1066T Versatile telephone transmission circuit with dialler interface
Product specification Supersedes data of September 1990 File under Integrated Circuits, IC03 1996 Apr 04
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
FEATURES * Voltage regulator with adjustable static resistance * Provides supply for external circuitry * Symmetrical low-impedance inputs for dynamic and magnetic microphones * Symmetrical high-impedance inputs for piezoelectric microphone * Asymmetrical high-impedance input for electret microphone * Dual-tone multi-frequency (DTMF) signal input with confidence tone * Mute input for pulse or DTMF dialling * Power down input for pulse dial or register recall QUICK REFERENCE DATA SYMBOL VLN Iline ICC VCC line voltage line current internal supply current supply voltage for peripherals PARAMETER CONDITIONS Iline = 15 mA normal operation power down input LOW power down input HIGH Iline = 15 mA; MUTE input HIGH; Ip = 1.2 mA Iline = 15 mA; MUTE input HIGH; Ip = 1.7 mA Gv voltage gain range for microphone amplifier low impedance inputs (pins 7 and 9) high impedance inputs (pins 8 and 10) receiving amplifier Tamb Gv Vexch Rexch operating ambient temperature Line loss compensation gain control exchange supply voltage exchange feeding bridge resistance 5.5 24 400 5.9 - - 44 30 17 -25 - - - - MIN. 4.25 10 - - 2.8 2.5
TEA1066T
* Receiving amplifier for magnetic, dynamic or piezoelectric earpieces * Large gain setting range on microphone and earpiece amplifiers * Line loss compensation facility, line current dependent (microphone and earpiece amplifiers) * Gain control adaptable to exchange supply * DC line voltage adjustment facility. GENERAL DESCRIPTION The TEA1066T is a bipolar integrated circuit that performs all speech and line interface functions required in fully electronic telephone sets. The circuit performs electronic switching between dialling and speech.
TYP. 4.45 - 0.96 55 3.05 -
MAX. 4.65 140 1.3 82 - -
UNIT V mA mA A V V
60 46 39 +75
dB dB dB C
6.3 60 1000
dB V
ORDERING INFORMATION TYPE NUMBER TEA1066T PACKAGE NAME SO20 DESCRIPTION plastic small outline package; 20 leads; body width 7.5 mm VERSION SOT163-1
1996 Apr 04
2
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
BLOCK DIAGRAM
TEA1066T
VCC
handbook, full pagewidth
LN 1 6 5 GAR QR+ QR-
17 IR 13
TEA1066T
4
MICL+ MICH+ MICH- MICL-
9 10 8 7 dB 2 GAS1
DTMF
15
dB
3
GAS2
MUTE PD
16 14 SUPPLY AND REFERENCE AGC CIRCUIT
CURRENT REFERENCE 12 VEE 18 REG 19 AGC 11 STAB
MEA009 - 1
20 SLPE
The blocks marked `dB' are attenuators.
Fig.1 Block diagram.
1996 Apr 04
3
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
PINNING SYMBOL LN GAS1 GAS2 QR- QR+ GAR MICL- MICH- MICL+ MICH+ STAB VEE IR PD DTMF MUTE VCC REG AGC SLPE PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DESCRIPTION positive line terminal gain adjustment transmitting amplifier gain adjustment transmitting amplifier inverting output receiving amplifier non-inverting output receiving amplifier gain adjustment receiving amplifier inverting microphone input, low impedance inverting microphone input, high impedance non-inverting microphone input, low impedance non-inverting microphone input, high impedance current stabilizer negative line terminal receiving amplifier input power-down input dual-tone multi-frequency input mute input supply voltage decoupling voltage regulator decoupling automatic gain control input slope (DC resistance) adjustment
handbook, halfpage
TEA1066T
LN GAS1 GAS2 QR-
1 2 3 4
20 SLPE 19 AGC 18 REG 17 VCC 16 MUTE
QR+ 5
TEA1066T
GAR MICL- 6 7 15 DTMF 14 PD 13 IR 12 VEE 11 STAB
MBH120
MICH- 8 MICL+ 9
MICH+ 10
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION Supplies: VCC, LN, SLPE, REG and STAB Power for the TEA1066T and its peripheral circuits is usually obtained from the telephone line. The TEA1066T develops its own supply voltage at VCC and regulates its voltage drop. The supply voltage VCC may also be used to supply external peripheral circuits, e.g. dialling and control circuits. The supply has to be decoupled by connecting a smoothing capacitor between VCC and VEE; the internal voltage regulator has to be decoupled by a capacitor from REG to VEE. An internal current stabilizer is set by a resistor of 3.6 k between STAB and VEE.
The DC current flowing into the set is determined by the exchange supply voltage (Vexch), the feeding bridge resistance (Rexch), the DC resistance of the telephone line (Rline) and the DC voltage on the subscriber set (see Fig.7). If the line current Iline exceeds the current ICC + 0.5 mA required by the circuit itself (approximately 1 mA) plus the current Ip required by the peripheral circuits connected to VCC, then the voltage regulator diverts the excess current via LN.
1996 Apr 04
4
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
The voltage regulator adjusts the average voltage on LN to: VLN = Vref + ISLPE x R9 or VLN = Vref + (Iline - ICC - 0.5 x 10-3A - Ip) x R9 where Vref is an internally generated temperature compensated reference voltage of 4.2 V and R9 is an external resistor connected between SLPE and VEE. The preferred value for R9 is 20 . Changing the value of R9 will also affect microphone gain, DTMF gain, gain control characteristics, side-tone level and the maximum output swing on LN. Under normal conditions, when ISLPE >> ICC + 0.5 mA + Ip, the static behaviour of the circuit is that of a 4.2 V regulator diode with an internal resistance equal to that of R9. In the audio frequency range, the dynamic impedance is largely determined by R1 (see Fig.3).
TEA1066T
and > 3 V, this being the minimum supply voltage for most CMOS circuits, including voltage drop for an enable diode. If MUTE is LOW, the available current is further reduced when the receiving amplifier is driven. Microphone inputs MICL+, MICH+, MICL- and MICH- and amplification adjustment connections GAS1 and GAS2 The TEA1066T has symmetrical microphone inputs. The MICL+ and MICL- inputs are intended for low-sensitivity, low-impedance dynamic or magnetic microphones. The input impedance is 8.2 k (2 x 4.1 k) and its voltage gain is typically 52 dB. The MICH+ and MICH- inputs are intended for a piezoelectric microphone or an electret microphone with a built-in FET source follower. Its input impedance is 40.8 k (2 x 20.4 k) and its voltage gain is typical 38 dB. The arrangements with the microphone types mentioned are shown in Fig.9. The gain of the microphone amplifier in both types can be adjusted over a range of 8 dB to suit the sensitivity of the transducer used. The gain is proportional to external resistor R7 connected between GAS1 and GAS2.
handbook, halfpage
LN L eq Rp R1
V ref R9 20 V EE
REG
VCC
An external capacitor C6 of 100 pF between GAS1 and SLPE is required to ensure stability. A larger value may be chosen to obtain a first-order low-pass filter. The cut-off frequency corresponds with the time constant R7 x C6. Mute input MUTE A HIGH level at MUTE enables the DTMF input and inhibits the microphone inputs and the receiving amplifier; a LOW level or an open circuit has the reverse effect. Switching the mute input will cause negligible clicks at the earpiece outputs and on the line. Dual-tone multi frequency input DTMF
C3 4.7 F
C1 100 F
MBA454
Rp = 17.5 k Leq = C3 x R9 x Rp
Fig.3 Equivalent impedance circuit.
The internal reference voltage can be adjusted by means of an external resistor RVA. This resistor, connected between LN and REG (pins 1 and 18), will decrease the internal reference voltage; when connected between REG and SLPE (pins 18 and 20) it will increase the internal reference voltage. Current Ip, available from VCC for supplying peripheral circuits, depends on external components and on the line current. Figure 8 shows this current for VCC > 2.2 V
When the DTMF input is enabled, dialling tones may be sent onto the line. The voltage gain from DTMF to LN is typically 25.5 dB and varies with R7 in the same way as the gain of the microphone amplifier. The signalling tones can be heard in the earpiece at a low level (confidence tone). Receiving amplifier: IR, QR+, QR- and GAR The receiving amplifier has one input IR and two complementary outputs, a non-inverting output QR+ and an inverting output QR-.
1996 Apr 04
5
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
These outputs may be used for single-ended or for differential drive, depending on the sensitivity and type of earpiece used (see Fig.10). Gain from IR to QR+ is typically 25 dB. This will be sufficient for low-impedance magnetic or dynamic earpieces, which are suited for single-ended drive. By using both outputs (differential drive), the gain is increased by 6 dB and differential drive becomes possible. This feature can be used when the earpiece impedance exceeds 450 (high-impedance dynamic, magnetic or piezoelectric earpieces). The output voltage of the receiving amplifier is specified for continuous-wave drive. The maximum output voltage will be higher under speech conditions, where the ratio of peak to RMS value is higher. The receiving amplifier gain can be adjusted over a range of 8 dB to suit the sensitivity of the transducer used. The gain is set by the external resistor R4 connected between GAR and QR+. Two external capacitors, C4 = 100 pF and C7 = 10 x C4 = 1 nF, are necessary to ensure stability. A larger value of C4 may be chosen to obtain a first-order, low-pass filter. The `cut-off' frequency corresponds with the time constant R4 x C4. Automatic gain control input AGC Automatic line loss compensation is obtained by connecting a resistor R6 between AGC and VEE. This automatic gain control varies the microphone amplifier gain and the receiving amplifier gain in accordance with the DC line current. The control range is 6 dB. This corresponds with a line length of 5 km for a 0.5 mm diameter copper twisted-pair cable with a DC resistance of 176 /km and an average attenuation of 1.2 dB/km. Resistor R6 should be chosen in accordance with the exchange supply voltage and its feeding bridge resistance (see Fig.11 and Table 1). Different values of R6 give the same ratio of line currents for start and end of the control range. If automatic line loss compensation is not required, AGC may be left open. The amplifiers then all give their maximum gain as specified. Power-down input PD During pulse dialling or register recall (timed loop break) the telephone line is interrupted, as a consequence it provides no supply for the transmission circuit and the peripherals connected to VCC. These gaps have to be
TEA1066T
bridged by the charge in the smoothing capacitor C1. The requirements on this capacitor are relaxed by applying a HIGH level to the PD input during the time of the loop break, which reduces the supply current from typically 1 mA to typically 55 A. A HIGH level at PD further disconnects the capacitor at REG, with the effect that the voltage stabilizer will have no switch-on delay after line interruptions. This results in no contribution of the IC to the current waveform during pulse dialling or register recall. When this facility is not required PD may be left open. Side-tone suppression Suppression of the transmitted signal in the earpiece is obtained by the anti-side-tone network consisting of R1//Zline, R2, R3, R8, R9 and Zbal (see Fig.14). Maximum compensation is obtained when the following conditions are fulfilled: R9 x R2 = R1 ( R3 + [ R8//Z bal ] ) (1) Z bal ( Z bal + R8 ) = Z line ( Z line + R1 ) (2)
If fixed values are chosen for R1, R2, R3, and R9, then condition (1) will always be fulfilled, provided that R8//Zbal < R3. To obtain optimum side-tone suppression, condition (2) has to be fulfilled, resulting in: Zbal = (R8/R1) Zline = k x Zline, where k is a scale factor: k = (R8/R1). Scale factor k (dependent on the value of R8) must be chosen to meet the following criteria: 1. Compatibility with a standard capacitor from the E6 or E12 range for Zbal 2. Zbal//R8 << R3 3. Zbal + R8 >> R9. In practice, Zline varies greatly with line length and cable type; consequently, an average value has to be chosen for Zbal. The suppression further depends on the accuracy with which Zbal/k equals the average line impedance. Example: The balanced line impedance Zbal at which the optimum suppression is preset can be calculated by: Assume Zline = 210 + (1265 /140 nF), representing a 5 km line of 0.5 mm diameter, copper, twisted-pair cable matched to 600 (176 /km; 38 nF/km). When k = 0.64, then R8 = 390 ; Zbal = 130 + (820 //220 nF). The anti-side-tone network for the TEA1060 family shown in Fig.4 attenuates the signal received from the line by 32 dB before it enters the receiving amplifier. 6
1996 Apr 04
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
The attenuation is almost constant over the whole audio frequency range. Figure 5 shows a conventional Wheatstone bridge anti-side-tone circuit that can be used as an alternative. Both bridge types can be used with either resistive or complex set impedances. The anti-side-tone network as used in the standard application (see Fig.13) attenuates the signal from the line
TEA1066T
with 32 dB. The attenuation is nearly flat over the audio-frequency range. Instead of the previously-described special TEA1066 bridge, the conventional Wheatstone bridge configuration can be used as an alternative anti-side-tone circuit. Both bridge types can be used with either a resistive set impedance or a complex set impedance.
LN
handbook, full pagewidth
Zline
R1
R2
VEE
im R3 R9 R8 SLPE Zbal
IR Rt
MSA500 - 1
Fig.4 Equivalent circuit of TEA1060 family anti-side-tone bridge.
handbook, full pagewidth
LN
R1 Zline
Zbal
VEE
im
IR Rt
R9
R8
RA
SLPE
MSA501 - 1
Fig.5 Equivalent circuit of an anti-side-tone network in a Wheatstone bridge configuration.
1996 Apr 04
7
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VLN VLN(R) VLN(RM) Iline Vn Ptot Tstg Tamb Tj Notes PARAMETER positive continuous line voltage repetitive line voltage during switch-on or line interruption repetitive peak line voltage for a 1 ms pulse R9 = 20 ; per 5 s R10 = 13 ; (Fig.10) line current voltage on any other pin total power dissipation IC storage temperature operating ambient temperature junction temperature R9 = 20 ; note 2 R9 = 20 ; note 1 CONDITIONS - - - - VEE - 0.7 - -40 -25 - MIN.
TEA1066T
MAX. 12 13.2 28 140 VCC + 0.7 555 +125 +75 125 V V V
UNIT
mA V mW C C C
1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE (see Fig.6). 2. Calculated for the maximum ambient temperature specified, Tamb = 75 C and a maximum junction temperature of 125 C. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air mounted on glass epoxy board 41 x 19 x 1.5 mm VALUE 90 UNIT K/W
1996 Apr 04
8
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
TEA1066T
MBH125
handbook, halfpage
150 ILN (mA) 130
110
90
(1) (2)
70
(3)
50
(4)
30 2 4 6 8 10 12 VLN - VSLPE (V)
(1) (2) (3) (4)
Tamb = 45 C; Ptot = 888 mW. Tamb = 55 C; Ptot = 777 mW. Tamb = 65 C; Ptot = 666 mW. Tamb = 75 C; Ptot = 555 mW.
Fig.6 Safe operating area.
CHARACTERISTICS Iline = 10 to 100 mA; VEE = 0 V; f = 800 Hz; R9 = 20 ; Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies: LN and VCC (pins 1 and 17) VLN voltage drop over circuit between LN and VEE Iline = 5 mA Iline = 15 mA Iline = 100 mA Iline = 140 mA VLN/T VLN voltage drop variation with temperature voltage drop over circuit between LN and VEE with external resistor RVA supply current supply voltage available for peripheral circuits Iline = 15 mA Iline = 15 mA; RVA = R1-18 = 68 k Iline = 15 mA; RVA = R18-20 = 39 k PD = LOW; VCC = 2.8 V PD = HIGH; VCC = 2.8 V VCC Iline = 15 mA; MUTE = HIGH; Ip = 0 mA Iline = 15 mA; MUTE = HIGH; Ip = 1.2 mA 3.95 4.25 5.40 - -4 3.50 4.70 - - 3.50 2.80 4.25 4.45 6.10 - -2 3.80 5 0.96 55 3.75 3.05 4.55 4.65 6.70 7.50 0 4.05 5.30 1.30 82 - - V V V V mV/K V V mA A V V
ICC
1996 Apr 04
9
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
SYMBOL Zi PARAMETER CONDITIONS MIN.
TEA1066T
TYP.
MAX.
UNIT
Microphone inputs MICL+ and MICL-; MICH+ and MICH- input impedance MICL+ (pin 9); MICL- (pin 7) MICH+ (pin 10); MICH- (pin 8) CMRR Gv common mode rejection ratio voltage gain MICL+/MICL- to LN MICH+/MICH- to LN Gvf GvT gain variation with frequency at f = 300 Hz and 3400 Hz gain variation with temperature at Tamb = -25 C and +75 C input impedance voltage gain from DTMF to LN gain variation with frequency at f = 300 Hz and 3400 Hz gain variation with temperature at Tamb = -25 C and +75 C gain variation with R7, transmitting amplifier Iline = 15 mA; R7= 68 k with respect to 800 Hz Iline = 50 mA; with respect to 25 C with respect to 800 Hz Iline = 50 mA; with respect to 800 Hz Iline = 15 mA; R7 = 68 51 37 -0.5 - 52 38 0.2 0.2 53 39 +0.5 - dB dB dB dB 3.3 16.5 - 4.1 20.4 82 4.9 24.5 - k k dB
Dual-tone multi-frequency input DTMF (pin 15) Zi Gv Gvf GvT 16.8 24.5 -0.5 - 20.7 25.5 0.2 0.2 24.6 26.5 +0.5 - k dB dB dB
Gain adjustment connections GAS1 and GAS2 (pins 2 and 3) Gv -8 - +8 dB
Transmitting amplifier output LN (pin 1) VLN(rms) Vno(rms) output voltage (RMS value) noise output voltage (RMS value) Iline = 15 mA; THD = 2% Iline = 15 mA; THD = 10% Iline = 15 mA; R7 = 68 k; microphone inputs open; psophometrically weighted (P53 curve) 1.9 - - 2.3 2.6 -70 - - - V V dBmp
Receiving amplifier input IR (pin 13) Zi Zo Gv input impedance 17 - 24 30 -0.5 - 21 25 - 26 32 +0.5 - k dB dB dB dB
Receiving amplifier outputs QR+ and QR- (pins 5 and 4) output impedance single-ended single-ended; RL = 300 differential; RL = 600 Gvf GvT gain variation with frequency at f = 300 Hz and 3400 Hz gain variation with temperature at Tamb = -25 C and +75 C with respect to 800 Hz Iline = 50 mA; with respect to 25 C 4 25 31 0.2 0.2 voltage gain from IR to QR+ or QR- Iline = 15 mA; R4 = 100 k
1996 Apr 04
10
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
SYMBOL Vo(rms) PARAMETER output voltage (RMS value) CONDITIONS sine-wave drive; Iline = 15 mA; Ip = 0 mA; THD = 2%; R4 = 100 k single-ended; RL = 150 single-ended; RL = 450 differential; CL = 47 nF; Rseries = 100 ; f = 3400 Hz Vno(rms) noise output voltage (RMS value) Iline = 15 mA; R4 = 100 k; pin 13 (IR) open; psophometrically weighted (P53 curve) single-ended; RL = 300 differential; RL = 600 Gain adjustment GAR (pin 6) Gv gain variation with R4 connected between pin 6 and pin 5 receiving amplifier -8 - - - 50 100 0.30 0.40 0.80 0.38 0.52 1.0 MIN.
TEA1066T
TYP.
MAX.
UNIT
- - -
V V V
- -
V V
+8
dB
MUTE input (pin 16) VIH VIL IMUTE Gv HIGH level input voltage LOW level input voltage input current voltage gain reduction between MICL+ (pin 9) and MICL- (pin 7) to LN (pin 1) voltage gain from DTMF to QR+ or QR- MUTE = HIGH 1.50 - - - - - 5 70 VCC 0.3 10 - V V A dB
Gv
MUTE = HIGH; R4 = 100 k; single-ended; RL = 300
-21
-19
-17
dB
Power-down input PD (pin 14) VIH VIL IPD HIGH level input voltage LOW level input voltage input current in power-down condition 1.5 - - - - 5 VCC 0.3 10 V V A
1996 Apr 04
11
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
SYMBOL Gv PARAMETER CONDITIONS MIN. -5.5
TEA1066T
TYP. -5.9
MAX. -6.3
UNIT
Automatic gain control input AGC (pin 19) gain control range from IR to QR+/QR- and from MIC+/MIC- to LN highest line current for maximum gain Iline = 70 mA; R6 = 110 k between AGC and VEE R6 = 110 k between AGC and VEE dB
Iline(H) Iline(L) Gv
- - -1.0
23 61 -1.5
- - -2.0
mA mA dB
lowest line current for minimum gain R6 = 110 k between AGC and VEE voltage gain variation between Iline = 15 mA and Iline = 35 mA; R6 = 110 k between AGC and VEE
handbook, full pagewidth
Rline
Iline ISLPE + 0.5 mA
R1 ICC 17 VCC 0.5 mA C1 peripheral circuits Ip
TEA1066T
Rexch DC AC Vexch REG 18 C3
1 LN
STAB SLPE 11 20 I SLPE R5 R9
VEE 12
MBH123
Fig.7 Supply arrangement.
1996 Apr 04
12
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
TEA1066T
handbook, halfpage
3
MBH124
Ip (mA) 2
(1)
(2)
(3)
1
(4)
0 0 1 2 4 3V CC (V)
Curves (1) and (3) are valid when the receiving amplifier is not driven or when MUTE = HIGH. Curves (2) and (4) are valid when MUTE = LOW and the receiving amplifier is driven, Vo(rms) = 150 mV, RL = 150 (asymmetrical). Iline = 15 mA; VLN = 4.45 V; R1 = 620 and R9 = 20 . (1) Ip = 2.55 mA. (2) Ip = 2.1 mA. (3) Ip = 1.2 mA. (4) Ip = 0.75 mA.
Fig.8 Typical current Ip available from VCC for external (peripheral) circuitry with VCC > 2.2 V and VCC > 3 V.
handbook, full pagewidth
17 VCC 9
(1)
MICL+
8
MICH-
10
MICH+
7
MICL-
10
MICH+ VEE 12
8
MICH-
MBH121
a. Magnetic or dynamic microphone.
b. Electret microphone.
c. piezoelectric microphone.
(1) May be connected to lower the terminating impedance.
Fig.9 Alternative microphone arrangements.
1996 Apr 04
13
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
TEA1066T
handbook, full pagewidth
QR+ QR- VEE
5 4 12
QR+
5
QR+
5
(1)
QR+
5
(2)
QR-
4
QR-
4
QR-
4
MBH122
a. Dynamic earpiece with less than 450 impedance.
b. Dynamic earpiece with more than 450 impedance.
c. Magnetic earpiece with more than 450 impedance.
d. piezoelectric earpiece.
(1) May be connected to prevent distortion (inductive load). (2) Required to increase the phase margin (capacitive load).
Fig.10 Alternative receiver arrangements.
handbook, full pagewidth
0 Gv (dB) -2
R6 =
MBH126
-4
48.7 k
78.7 k
110 k
140 k
-6
0
20
40
60
80
100
120
140 Iline(mA)
R9 = 20 .
Fig.11 Variation of gain with line current, with R6 as a parameter.
1996 Apr 04
14
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
Table 1
TEA1066T
Values of resistor R6 for optimum line loss compensation, for various usual values of exchange supply voltage Vexch and exchange feeding bridge resistance Rexch; R9 = 20 R6 (k)
Vexch (V) 24 36 48 60
Rexch = 400 61.9 100 140 X
Rexch = 600 48.7 78.7 110 X
Rexch = 800 X 68 93.1 120
Rexch = 1000 X 60.4 82 102
handbook, full pagewidth
R1 17 13 9, 10 Vi 7, 8 15 16 IR VCC 620 1 LN QR- 4 100 F RL 600 R4 100 k C4 100 pF
Iline
Vo
MICL+/MICH+ MICL-/MICH- DTMF MUTE PD VEE 12 C3 4.7 F
QR+
5
100 F C1
TEA1066T
GAR
6 2
C7 1 nF GAS1 10 to 140 mA 3 R7 68 k C6 100 pF
10 F Vi
14
GAS2 REG AGC STAB SLPE 18 19 11 20 R6 R5 3.6 k R9 20
MBH127
Voltage gain is defined as: Gv = 20 log Vo/Vi. For measuring the gain from MICL+, MICL- or MICH+ and MICH-, the MUTE input should be LOW or open; for measuring the DTMF input, MUTE should be HIGH. Inputs not under test should be open.
Fig.12 Test circuit for defining voltage gain of MICL+, MICL-, MICH+ and MICH- DTMF inputs.
1996 Apr 04
15
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
TEA1066T
handbook, full pagewidth
R1 17 13 9, 10 Vi 10 F 7, 8 15 IR VCC 620 1 LN QR- 4 ZL QR+ MICL-/MICH- DTMF MUTE PD VEE 12 C3 4.7 F 5 R4 100 k C4 100 pF Vo 100 F
I line
600
MICL+/MICH+
TEA1066T
GAR GAS1
6 2
C1 100 F 16 14
C7 1 nF 10 to 140 mA R7
GAS2 REG AGC STAB SLPE 18 19 11 20 R6 R5 3.6 k R9 20
3
C6 100 pF
MBH128
Voltage gain is defined as: Gv = 20 log Vo/Vi.
Fig.13 Test circuit for defining voltage gain of the receiving amplifier.
1996 Apr 04
16
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
APPLICATION INFORMATION
TEA1066T
handbook, full pagewidth
R1 620 R10 13 R2 130 k C5 13 4 IR QR- 15 16 14 from dial and control circuits 1 LN 17 VCC C1 100 F
BAS11 (2x)
100 nF R11
5 telephone BZW14 line (2x) C4 R4 100 pF R3 6 3.92 1 nF k C7 9, 10
QR+
DTMF
TEA1066T
GAR
MUTE PD
MICL+/MICH+
7, 8
MICL-/MICH- SLPE 20 GAS1 GAS2 2 3 R7 C6 C3 4.7 F R6 R5 3.6 k REG 18 AGC 19 STAB 11 VEE 12
R8 390 Zbal R9 20
100 pF
MBH129
Typical application of the TEA1066, shown with a piezoelectric earpiece and DTMF dialling. The bridge to the left and R10 limit the current into the circuit and the voltage across the circuit during line transients. Pulse dialling or register recall require a different protection arrangement.
Fig.14 Application diagram.
1996 Apr 04
17
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
TEA1066T
handbook, full pagewidth
LN cradle contact
VCC DTMF
VDD TONE M1
TEA1066T MUTE
PD VEE
PCD3310
DP/FLO VSS
telephone line BSN254A
MEA008 - 1
The dashed lines show an optional flash (register recall by timed loop break).
Fig.15 DTMF pulse set with CMOS PCD3310 dialling circuit.
1996 Apr 04
18
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
PACKAGE OUTLINE SO20: plastic small outline package; 20 leads; body width 7.5 mm
TEA1066T
SOT163-1
D
E
A X
c y HE vMA
Z 20 11
Q A2 A1 pin 1 index Lp L 1 e bp 10 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT163-1 REFERENCES IEC 075E04 JEDEC MS-013AC EIAJ EUROPEAN PROJECTION A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 13.0 12.6 0.51 0.49 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 0.42 0.39 L 1.4 0.055 Lp 1.1 0.4 0.043 0.016 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
8o 0o
ISSUE DATE 92-11-17 95-01-24
1996 Apr 04
19
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering
TEA1066T
Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1996 Apr 04
20
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA1066T
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Apr 04
21
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
NOTES
TEA1066T
1996 Apr 04
22
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
NOTES
TEA1066T
1996 Apr 04
23
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02) 805 4455, Fax. (02) 805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. (01) 60 101-1256, Fax. (01) 60 101-1250 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. (172) 200 733, Fax. (172) 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. (359) 2 689 211, Fax. (359) 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: see South America China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (852) 2319 7888, Fax. (852) 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (032) 88 2636, Fax. (031) 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. (358) 0-615 800, Fax. (358) 0-61580 920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01) 4099 6161, Fax. (01) 4099 6427 Germany: P.O. Box 10 51 40, 20035 HAMBURG, Tel. (040) 23 53 60, Fax. (040) 23 53 63 00 Greece: No. 15, 25th March Street, GR 17778 TAVROS, Tel. (01) 4894 339/4894 911, Fax. (01) 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, BOMBAY 400 018 Tel. (022) 4938 541, Fax. (022) 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. (01) 7640 000, Fax. (01) 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. (03) 645 04 44, Fax. (03) 648 10 07 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. (0039) 2 6752 2531, Fax. (0039) 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. (03) 3740 5130, Fax. (03) 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. (02) 709-1412, Fax. (02) 709-1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03) 750 5214, Fax. (03) 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. 9-5(800) 234-7831, Fax. (708) 296-8556 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. (040) 2783749, Fax. (040) 2788399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09) 849-4160, Fax. (09) 849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (022) 74 8000, Fax. (022) 74 8341 Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (63) 2 816 6380, Fax. (63) 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. (022) 612 2831, Fax. (022) 612 2327 Portugal: see Spain Romania: see Italy Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. (65) 350 2000, Fax. (65) 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. (011) 470-5911, Fax. (011) 470-5494 South America: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SAO PAULO-SP, Brazil, P.O. Box 7383 (01064-970), Tel. (011) 821-2333, Fax. (011) 829-1849 Spain: Balmes 22, 08007 BARCELONA, Tel. (03) 301 6312, Fax. (03) 301 4107 Sweden: Kottbygatan 7, Akalla. S-16485 STOCKHOLM, Tel. (0) 8-632 2000, Fax. (0) 8-632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. (01) 488 2211, Fax. (01) 481 77 30 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. (886) 2 382 4443, Fax. (886) 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. (66) 2 745-4090, Fax. (66) 2 398-0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. (0212) 279 2770, Fax. (0212) 282 6707 Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel. 380-44-4760297, Fax. 380-44-4766991 United Kingdom: Philips Semiconductors LTD., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. (0181) 730-5000, Fax. (0181) 754-8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800) 234-7381, Fax. (708) 296-8556 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. (381) 11 825 344, Fax. (359) 211 635 777
Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31-40-2724825 SCDS48 (c) Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
417021/10/02/pp24 Document order number: Date of release: 1996 Apr 04 9397 750 00783


▲Up To Search▲   

 
Price & Availability of TEA1066T

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X